Papers – Page 8 – TechConnect Briefs

Electron Vortices in Semiconductor Devices

Mohseni K., Shakouri A., Ram R.J., California Institute of Technology, US

The hydrodynamic model of electron transport in semiconductors is analyzed and in analogy to uid mechanics the transport equation for the electron vorticity, rv, is derived. Aside from the classical hydrodynamic sources of vorticity, collision [...]

Ensemble Monte Carlo Simulation of Raman Scattering in an AlxGa1-xAs System to Determine the Relative Strength of the Polar Optical Modes

Shifren L., Ferry D.K., Arizona State University, US

A Monte Carlo simulation is used to study Raman scattering and the relative strengths of the polar optical modes in an AlxGa1-xAs system. The dual polar optical modes in the system are incorporated by including [...]

Self-Consistent Calculations of Spatial Electron Densities in Quantum Dots Using a Coupled Recursive Green’s Function and Poisson Solver

Badrieh F., Ferry D.K., Arizona State University, US

We are utilizing the Recursive Green's function method to calculate the conductance in quantum dots as a function of Fermi energy, magnetic field and random potentials. We have extended the use of the method to [...]

Modeling Artificial Molecules Composed of Coupled Quantum Dots

Akis R., Vasileska D., Arizona State University, US

Recently, there has been much interest in coupled quantum dots. With individual dots, if the energy levels can be resolved, then one can think of a dot as representing an "artificial atom" [1]. Thus, fabricating [...]

A Methodology for Modeling a Complex Geometry on Wafer from a Layout Data

Yoon S., Kwon O., Won T., Inha University, KR

This paper reports a novel methodology and its application to the modeling of a complex 3D geometry on wafer from a layout data. Our modeling method comprises the steps of: drawing a mask layout; transforming [...]

Transient Simulation of Ferroelectric Hysteresis

Dragosits K., Hagenbeck R., Selberherr S., Technical University of Vienna, AT

We present amodel that allows the analysis of the behavior of ferroelectric materials in a wide range of frequencies. A common approach to the transient properties of dielectrics based on differential equations was extended by [...]

Wavelet Based Matrix Compression in Numerical Micromagnetics

Schrefl T., Süss D., Fidler J., Vienna University of Technology, AT

Magnetic sensors and magneto-mechanic devices consist of spatially distinct ferromagnetic parts. Modeling their functional behavior requires to take into account the magnetostatic interactions between the magnetic elements. A hybrid finite element / boundary element method [...]

Hybrid P-Element and Trefftz Method for Capacitance Computation

Gyimesi M., Wang J-S., Ostergaard D.F., ANSYS, Inc., US

The paper discusses efficient electrostatic field solutions techniques to simulate micro electro mechanical systems (MEMS): adaptive p-elements to remove the burden of manual mesh refinement; hybrid finite elements - Trefftz formulation to treat open boundary [...]

Influence of Element Size on the Precision and Required Computational Effort for 3D FEM Interconnect Capacitance Simulations of ULSI DRAM Cells

Hieke A., Infineon Technologies Corporation, US

A fundamental proble of all FEM capacitance computations in MEMS and ULSI is to determine proper mesh size for the elements representing the considered model. In particular, opticaml mesh size selection is crucial for large [...]

Inductance Calculation in Interconnect Structures

Harlander C., Sabelka R., Selberherr S., Technical University of Vienna, AT

We present a package based fnite elements for two and three-dimensional analyses of interconnect structures. Two preprocessors allow a layer-based input of the simulation geometry and the specification of the boundary conditions. Additionally, a third [...]