Papers – Page 10 – TechConnect Briefs

Study of Voltage Tunable Asymmetric Quantum Well Structure for Infrared Detection

Vaya P.R., Ananda Natarajan S., Srinivasan K.R., Indian Institute of Technology, IN

The performance of GaAs/AlGaAs asymmetric quantum well infrared detectors exhibiting inter subband absorption has been studied. The asymmetric quantum well structure considered for the present study consists of two regions, a step quantum well with [...]

Two-Dimensional MOSFET Dopant Profile by Inverse Modeling via Source/Drain-to-Substrate Capacitance Measurement

Chiang C.Y.T., Yeow Y.T., Ghodsi R., University of Queensland, AU

This paper proposes and demonstrates a new approach to 2-dimensional dopant profile extraction for MOSFET's by treating the source/drain-to-substrate junction as a gated diode. The small-signal capacitance of the diode measured as a function of [...]

Investigation of High Frequency Noise in a SiGe HBT Based on Shockley’s Impedance Field Method and the Hydrodynamic Model

Decker S., Neinhus B., Heinemann B., Jungemann C., Meinerzhagen B., University of Bremen, DE

This paper presents the first simulation of the minimum noise figure of a heterojunction bipolar transistor based on Shockley's impedance field method and the hydrodynamic model. The hydrodynamic model and the impedance field method are [...]

Modelling of the “Gated-Diode” Configuration in Bulk MOSFET’s

Yip A., Yeow Y.T., Samudra G.S., Ling C.H., TECH Semiconductor, SG

A study of the “gated-diode” configuration in MOSFET’s for characterising hot-carrier degradation by employing 2-D simulations is presented in this paper. We use both process and device simulations to understand operational sensitivity of this technique. [...]

Optimization of FIBMOSs through 2-D Device Simulations

Kang J., Schroder D.K., Pivin D.P., Arizona State University, US

Channel engineering can enhance the performance of MOSFETs. Focused ion beam (FIB) implant technology is one approach for such channel engineering. We have investigated FIB and present a sophisticated optimization technique for FIB MOSFETs (FIBMOS) [...]

Tunneling-Assisted Currents in n+p+ Amorphous Silicon Junctions

Furlan J., Gorup Z., University of Ljubljana, SI

A theoretical model for the tunneling transport of charge carriers in forward-biased heavily doped amorphous silicon pn junctions was recently presented. In this paper, in addition to current-voltage characteristics in the forward direction, reverse-voltage characteristics [...]

Mobility Degradation and Current Loss Due to Vertical Electric Field in Channel Area of Submicron MOS Devices

Keshavarz A.A., Walters J.L., Sampson R., STMicrolectronics, US

In this work we show quantified modeling results for the effect of gate-voltage-induced mobility degradation on MOS device current. Presented results are for three technologies, i.e. 0.50 mm, 0.35mm, and 0.25mm, and are based on [...]

A New Continuous Model for Deep Submicron MOSFETs

Chan K-M.S., Wong N-C.A., Wong S-C., Chao C-J., Kao D-B., Wong N-C.A., Wong S-C., Yang C.Y., Winbond Electronics Corporation America, US

A 1-D model is developed to account for mobile charges in the Source/Drain junction regions of a MOSFET. 2-D effects such as Threshold Roll-off and Drain Induced Barrier Lowering are accounted for with an empirical [...]

Genetic Algorithm Based MOSFET Model Parameter Extraction

Keser M., Joardar K., Motorola SPS, US

The Levenberg-Marquardt (LM) minimization algorithm commonly employed in MOSFET model parameter extraction has several known deficiencies, such as poor convergence characteristics without a good initial guess, low likelihood of convergence to the globally optimal solution, [...]

Automatic Generation of Equivalent Circuits from Device Simulation

Pacelli A., Mastrapasqua M., Alam M.A., Luryi S., Bell Laboratories, Lucent Technologies, US

We present a novel methodology for the direct extraction of equivalent circuit models from device simulation. The circuit topology is physically based, i.e., each voltage node corresponds to a quasi-Fermi level or to an electrostatic [...]