Inverse Modeling for C-V Profiling of Modulated-Doped Semiconductor Structures

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Inverse modeling is a way for the verification of device models and for the parameter extraction. A technique of doping profile extraction of semiconductor structures based on the capacitance-voltage measurements (or C-V profiling) is used extensively. This technique up till now has been applied in two variants: the well-known classical C-V profiling to the sufficiently smooth doping profiles and the inverse modeling technique based on the error minimization to the abrupt profiles. The present paper describes a new method of the inverse modeling with sub-Debye resolution for arbitrary doping profiles. The calculations can be performed using a Pentium-like personal computer. For the input data obtained by forward modeling, the integral error of doping profile extraction is below 0.1 %. As an example, the doping profile determination of the GaAs modulated-doped structure is presented. The possibilities of the proposed method are discussed.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 392 - 395
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0