Equation of p-n Junction for High Current Density Models of Transistor


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The results of theoretical and experimental investigations of p-n junction at junction voltages close to the potential barrier are presented. It is shown that in such a situation the voltage-current characteristic can be described by algebraic equation in explicit form and that exponential description of characteristic is in conflict with physics at junction voltages close to the potential barrier. Possibility to create the transistor models for high current density and possibility to describe on basis of these models in many cases the static parameters of integrated circuits by mathematical expressions in explicit form is the advantage of suggested p-n junction equation.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 384 - 387
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-7-0