Ravariu C. – TechConnect Briefs

A Nano-Transistor with a Cavity

Profirescu M., Ravariu C., Ravariu F., Rusu A., Politehnica University of Bucharest, RO

A SOI nanotransistor with a cavity was simulated. The global current is a superposition of a tunnel current through the cavity and an inversion current at the film bottom. The tunnel source-drain current prevails in [...]

A Mathematical Model for the Threshold Voltage of a Partially and Fully Depleted MOS/SOI Structure with a Gaussian Distribution in the Film

Avram M., Codreanu C., Dobrescu D., Dobrescu L., Ravariu C., Ravariu F., Rusu A., University of Bucharest, RO

The analytical models for the electric field and potential distributions are necessary to establish the inversion or accumulation conditions at the front and back interfaces for a lot of SOI devices. The paper refers to [...]