Papers – Page 11 – TechConnect Briefs

A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET’s Technology Development and Circuit Simulation

Zhou X., Lim K.Y., Nanyang Technological University, SG

This paper presents a novel approach to formulating compact I-V models for deep-submicron MOS technology development. The developed model is a one-region closed-form equation that resembles the same form as the long-channel one, which covers [...]

Analytical Results for the Current-Voltage Characteristics of an SOI-MOSFET

Morris H.C., Cumberbatch E., Phillips T., Hinderberger B., Claremont Graduate University, US

Exact formulae for the current-voltage characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward [1,2]. A detailed comparison with test data is presented and [...]

Improved Prediction of Length/Temperature-Dependent Impact Ionization Induced Body Current Based on an Accurate Saturation Drain Voltage Model

Seah S.H.L., Yeo K.S., Ma J.G., Do M.A., Nanyang Technological University, SG

The length/temperature-dependent body current IB in deep submicron LDD pMOSFETs is investigated, based on an improved saturation drain voltage (VSDsat) extraction algorithm and model. The accuracy of VSDsat is shown to have a direct influence [...]

Behavioral Models and Specific Design Tool for New Power Integrated Devices

Bordingnon T., Sanchez J.-L., Austin P., Houdbert V., LAAS/CNRS, FR

The developments of power systems require the use of specific functions offering a higher performance while being more compact and more reliable than existing discrete functions. To facilitate the design of these new functions,based on [...]

Modeling of Threshold Voltage with Reverse Short Channel Effect

Lim K.Y., Zhou X., Wang Y., Nanyang Technological University, SG

This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian [...]

Modeling of On-Chip Simultaneous Swithcing Noise in VDSM CMOS Circuits

Tang K.T., Friedman E.G., University of Rochester, US

On-chip simultaneous switching noise (SSN) has become an important issue in the design of power distribution networks in current VLSI/ULSI circuits. An analytical expression characterizing the simultaneous switching noise voltage is presented here based on [...]

A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction d-doped PHEMTs – Modeling and Measurements

Rao R.V.V.V.J., Joe J., Chia Y.W.M., Ang K.S., Wang H., Ng G.I., National University of Singapore, SG

A simple and accurate method for extracting small-signal signal equivalent circuit for double heterojunction d-doped PHEMTs was developed. The circuit elements were extracted from the S-parameters of PHEMTs. Parasitic inductances Lg, Ld and Ls were [...]

Verilog-AMS Eases Mixed Mode Signal Simulation

Miller I., Cassagnes T., Motorola ESD Europe, US

The ability to design and verify mixed mode (digital, analog, electrical, and non-electrical) systems is key to the development of new products for the ever expanding electromechanical market. Although there are several individual point tools [...]

Simulating IMD in SiGe HBTs: How good are our models?

Wong P., Pejcinovic B., Portland State University, US

Nominal transistor model parameters are found to be insufficient for reliably predicting intermodulation distortion (IMD) in heterojunction bipolar transistors. A method for optimizing the model parameters to give a more accurate simulation of IMD performance [...]

3D Thermo-Electro-Mechanical Simulations of Gas Sensors Based on SOI Membranes

Lu C-C., Setiadi D., Udrea F., Milne W.I., Covington J.A., Gardner J.W., Cambridge University, UK

3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2ñbased multilayer membrane has been performed to ensure a high [...]