The length/temperature-dependent body current IB in deep submicron LDD pMOSFETs is investigated, based on an improved saturation drain voltage (VSDsat) extraction algorithm and model. The accuracy of VSDsat is shown to have a direct influence on the extraction of the impact ionization parameters (Ai, B i, lc) and prediction of IB. Approximations of impact ionization constants (Ai, Bi) and their linear dependency on temperature have been verified, for the first time, to be inadequate as the device length scales to deep submicron regimes. With a new proposed IB model, an improved prediction of IB for a wide range of biases, temperatures and channel lengths is also presented.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 325 - 328
Industry sector: Sensors, MEMS, Electronics
Topicss: Compact Modeling, Nanoelectronics