A Novel Approach to Compact I-V Modeling for Deep-Submicron MOSFET’s Technology Development and Circuit Simulation

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This paper presents a novel approach to formulating compact I-V models for deep-submicron MOS technology development. The developed model is a one-region closed-form equation that resembles the same form as the long-channel one, which covers full range of channel length and bias conditions. Model parameter extraction follows a one-iteration prioritized sequence with minimum measurement data, and can be correlated to process variables.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 333 - 336
Industry sector: Sensors, MEMS, Electronics
Topicss: Compact Modeling, Nanoelectronics
ISBN: 0-9666135-7-0