Exact formulae for the current-voltage characteristics of an SOI/SOS MOSFET operating in the fully depleted mode are derived by extending the asymptotic method of Ward [1,2]. A detailed comparison with test data is presented and the model is shown to be effective over a range of device geometries and voltages up to the kink attributable to impact ionization.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 329 - 332
Industry sector: Sensors, MEMS, Electronics
Topicss: Compact Modeling, Nanoelectronics