3D thermo-electro-mechanical device simulations are presented of a novel fully CMOS-compatible MOSFET gas sensor operating in a SOI membrane. A comprehensive stress analysis of a Si-SiO2ñbased multilayer membrane has been performed to ensure a high degree of mechanical reliability at a high operating temperature (e.g. up to 400(C). Moreover, optimisation of the layout dimensions of the SOI membrane, in particular the aspect ratio between the membrane length and membrane thickness, has been carried out to find the best trade-off between minimal device power consumption and acceptable mechanical stress.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 297 - 300
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems