This paper presents a new reverse short channel effect (RSCE) model for threshold voltage modeling of submicrometer MOSFETs. Unlike those conventional empirically-based RSCE models, the proposed model is derived and simplified based on two Gaussian profiles to simulate boron pile-up at the source and drain edges of nMOS devices. The model has a simple compact form that can be utilized to study and characterize the pile-up profile of advanced halo-implant MOSFETs. The analytical model has been applied to, and verified with, experimental data of a 0.25-mm CMOS process for various channel length and substrate bias conditions.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2000 International Conference on Modeling and Simulation of Microsystems
Published: March 27, 2000
Pages: 317 - 320
Industry sector: Sensors, MEMS, Electronics
Topicss: Compact Modeling, Nanoelectronics