A Novel Method for the De-Embedding of S-Parameters of Double Heterojunction d-doped PHEMTs – Modeling and Measurements
Ang K.S., Chia Y.W.M., Joe J., Ng G.I., Rao R.V.V.V.J., Wang H., National University of Singapore, SG
A simple and accurate method for extracting small-signal signal equivalent circuit for double heterojunction d-doped PHEMTs was developed. The circuit elements were extracted from the S-parameters of PHEMTs. Parasitic inductances Lg, Ld and Ls were [...]