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HomeTopicsCompact Modeling

Topic: Compact Modeling

Modeling Strategies for Flash Memory Devices

Padovani A., Larcher L., Pavan P., Università di Modena e Reggio Emilia, IT
Flash memories are one of the most pervasive components of today electronic systems. The continuous scaling of the memory device opened new issues with regards to sensitivity of the cell threshold voltage to degradation mechanisms [...]

A Phase-Change Random Access Memory Model for Circuit Simulation

Chan M., HKUST, HK
A temperature tracking approach has been developed to model the property of phase-change memory (PCM) behavior under input pulses with arbitrary magnitude and shapes. By utilizing the Johnson-Mehl-Avrami equation to monitor the crystal fraction in [...]

Process Variability Modeling for VLSI Circuit Simulation

Saha S.K., SuVolta, Inc., US
It is well known that the process variability has severely impacted the delay and power variability in VLSI devices, circuits, and chips, and the impact of process variability keeps increasing as MOSFET devices and CMOS [...]

Modeling of High Voltage Devices for ESD Event Simulation

Zhou Y., Salcedo J., Hajjar J.-J., Analog Devices, Inc., US
BCDMOS process technologies are key in enabling highly integrated mixed-signal application for the automotive, medical and industrial sectors. Achieving satisfactory ESD performance in high voltage mixed-signal applications requires synthesized co-design using circuit-level ESD event simulation [...]

High-Voltage MOSFET Compact Modeling

Seebacher E., austriamicrosystems AG, AT
In many new applications like communication and automotive electronics the usage of integrated high voltage MOS transistors (LDMOS and DMOS) requires highly accurate compact models. At first we discuss the industrial requirements for modern high [...]

A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics

Wei L., Frank D.J., Chang L., Wong H.S.P., Massachusetts Institute of Technology, US
In this paper, an analytical model of intrinsic carbon nanotube field effect transistors (CNFETs) is presented based on ballistic transport and careful analysis of the quantum capacitances, which requires neither iteration nor numeric integration. Essential [...]

Compact Subthreshold Modeling of Rectangular Gate and Trigate MOSFETs

Fjeldly T.A., Monga U., Norwegian University of Technology, NO
We have previously shown that the subthreshold potential distribution of DG and circular gate MOSFETs can be precisely modeled using conformal mapping techniques. Simpler, unified models suitable for circuit design can also be established for [...]

Xsim: A Unified Compact Model for Bulk/SOI/DG/GAA MOSFETs

Zhou X., Nanyang Technological University, SG
This paper presents a unified compact model (Xsim) for bulk/SOI MOSFETs, double-gate (DG) FinFETs, and gate-all-around (GAA) silicon-nanowires (SiNWs) that has been under development over the past 13 years. One key feature of the model [...]

Compact Models for sub-22nm MOSFETs

Chauhan Y.S., Lu D., Venugopalan S., Morshed T., Karim M.A., Niknejad A., Hu C., University of California-Berkeley, US
FinFET and UTBSOI FET (or ETSOI) are the two promising multi-gate FET candidates for sub-22nm CMOS technology. BSIM multi-gate FET models (BSIM-CMG and BSIM-IMG) are the surface potential based physical compact models for FinFET and [...]

UF “Compact” Models: A Historical Perspective

Fossum J.G., University of Florida, US
The history of the developments of “compact” models for SOI MOSFETs at the University of Florida (UF) is reviewed. The uniqueness and innovation of the UF “process-based” models are reiterated, and their global utility as [...]

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