A Phase-Change Random Access Memory Model for Circuit Simulation

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A temperature tracking approach has been developed to model the property of phase-change memory (PCM) behavior under input pulses with arbitrary magnitude and shapes. By utilizing the Johnson-Mehl-Avrami equation to monitor the crystal fraction in the phase-change element crystallization process, the resulting resistance of the memory is dynamically calculated. Multi-level memory program and data retention can also be simulated using the proposed method. The model has been implemented in a circuit simulator by Verilog-A and has been verified by experimental data in the literature as well as numerical simulation

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Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 756 - 761
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 978-1-4398-7139-3