Wei L., Frank D.J., Chang L., Wong H.S.P.
Massachusetts Institute of Technology, US
Keywords: carbon nanotube, electrostatic capacitance, quantum capacitance, transport model
In this paper, an analytical model of intrinsic carbon nanotube field effect transistors (CNFETs) is presented based on ballistic transport and careful analysis of the quantum capacitances, which requires neither iteration nor numeric integration. Essential physics, such as the drain-induced-barrier-lowing (DIBL) and quantum capacitances, are captured with a reasonable accuracy compared with numerical simulations. The model facilitates fast circuit simulation and system optimization.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 738 - 741
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4398-7139-3