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HomeTopicsCompact Modeling

Topic: Compact Modeling

Measurements and Modeling of Mobility in Ultra-Thin SOI

Mastrapasqua M., Esseni D., Fiegna C., Agere Systems, US
We present a study of the effective mobility (ueff) of ultra thin SOI n MOSFETs for both single and double gate operation. Electron mobility was measured for silicon thickness Tsi down to approximately 5 nm [...]

Methodology for Model Generation with Accuracy from DC to RF

Zhang X., Williams M., Liu Z., Celestry Design Technologies, US
This paper presents an example modeling flow for generating a RF CMOS model. Initially, the objectives of this modeling approach are analyzed. Then issues in test structure design are discussed. In the section of model [...]

How to Build an SOI MOSFET Compact Model without Violating the Laws of Physics

Watts J., IBM Microelectronics, US
An important application for partially depleted SOI is high performance microprocessors and other logic chips. In order to deliver market leading performance it is necessary for transistor design and circuit design to be done concurrently. [...]

Interconnect Modeling for High Speed Digital Circuits – the Role of RLC Coupling

Suaya R., Mentor Graphics, FR
The modelisation of capacitance and inductance of wires for timing and noise simulation of digital circuits is discussed. Different domains characterized by the length of the wires and the driving strength require different approximations in [...]

The Role of TCAD in Compact Modeling

Duane M., Applied Materials, US
This paper is an introduction to semiconductor process and device simulation and its role in compact modeling for circuit simulation. A brief history of TCAD is given. One use of TCAD is in the generation [...]

Unified Statistical Modeling for Circuit Simulation

McAndrew C., Drennan P.G., Motorola, US
Accurate statistical simulation and modeling are important for IC design. Different types of statistical simulation require different types of statistical models. In this paper a unified approach to statistical modeling and characterization is presented. Based [...]

Xsim: A Compact Model for Bridging Technology Developers and Circuit Designers

Zhou X., Nanyang Technological University, SG
This paper describes the ideas and philosophy behind a new compact model (CM) for deep-submicron MOSFETs, called Xsim, which has been developed from scratch over the past few years. Similarities to and differences from existing [...]

Automatic Generation of RF Compact Models from Device Simulation – Part I: Motivation and methodology

Luryi & A. Pacelli S., State University of New York at Stony Brook, US
We review a recently proposed methodology for automatic generation of equivalent circuits from physical device simulation. The method is based on the calibration of a simplified equivalent-circuit model on simulation results, and can achieve an [...]

CMOS RF Modeling and Parameter Extraction Approaches Taking Charge Conservation into Account

Je M., Kwon I., Han J., Shin H., Lee K., Korea Advanced Institute of Science and Technology, KR
A charge conserving small-signal equivalent circuit with very simple and accurate parameter extraction method for a three-terminal CMOS RF model is presented. We found that significant errors in circuit performances can be obtained if charge [...]

RF MOSFET Noise Parameter Extraction and Modeling

Jamal Deen M., Chen C-H, McMaster University, CA
In this paper, a novel procedure for extracting the important noise sources in MOSFETs is reviewed. Examples of extracted noise sources as a function of frequency, bias and geometry are presented using devices from a [...]

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