Measurements and Modeling of Mobility in Ultra-Thin SOI

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We present a study of the effective mobility (ueff) of ultra thin SOI n MOSFETs for both single and double gate operation. Electron mobility was measured for silicon thickness Tsi down to approximately 5 nm using a special test structure able to circumvent parasitic resistance effects. At small inversion density, Ning, the mobility is clearly reduced for decreasing Tsi, due to enhanced phonon scattering in the thin quantum well. However, for double gate operation, DB, we found an improvement in the effective mobility when compared with single gate, SG, operation.

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Journal: TechConnect Briefs
Volume: 1, Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems
Published: April 22, 2002
Pages: 734 - 737
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 0-9708275-7-1