Compact Modeling – Page 13 – TechConnect Briefs

Methodology and Design Kit Integration of a Broadband Compact Inductor Model

A physics-based broadband inductor model is presented that accurately captures geometry scaling, process statistics, and temperature dependence. The model utilizes an accurate and physical skin effect formulation, with substantial improvements over previous methods, along with [...]

An Approximate Explicit Solution to General Diode Equation

He J., Tao Y., Yang C., Feng M., Li B., Bian W., Chen Y., Peking University, CN

an approximate explicit solution for a normalized diode has been developed in this paper. The accuracy of the diode current calculation and its derivative prediction has also been verified compared with the result of the [...]

A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range

Klimach H., Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

Mismatch is the denomination of time-independent variations between identically designed components. In analog circuits, the spread in the dc characteristics of supposedly matched transistors results in inaccurate or even anomalous circuit behavior. Also, for digital [...]

An Efficient Sectionalized Modeling Approach for Introduction of

Milovanovic V., Mijalkovic S., Delft University of Technology, NL

Modeling of breakdown phenomena is becoming central problem in today's design of high-speed bipolar circuits. It is especially important for the output stages that should simultaneously provide speed and output signal power. To this end, [...]

Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model

Nakagawa T., Sekigawa T., Tsutsumi T., Hioki M., O’uchi S., Koike H., AIST, JP

We have proposed a compact model for four-terminal DG MOSFETs based on double charge-sheet model, with the velocity saturation effect as a function of carrier density profile inside the channel, with explicit handling of drain [...]

Compact Models for Asymmetric Double Gate MOSFETs

Morris H.C., Abebe H., Cumberbatch E.C., San Jose State University, US

Double-gate MOSFET's are one possible option to further extend CMOS scaling when planar MOSFET's have reached their scaling limit. This paper presents an analytic potential model for long-channel asymmetric double-gate (ADG) MOSFETs. The asymmetry is [...]

Body Bias Dependency of Substrate Current and Its Modeling for SOI Devices

Ma Y., Jeng M-C, Liu Z., Cadence Design System, Inc., US

Two competing factors affect the body bias dependence of substrate current in SOI devices. One is through drain current. The other is through electric field in channel near drain side. It is shown that with [...]

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs

He J., Liu F., Bian W., Tao Y., Wu W., Lu K., Wang T., Chan M., Peking University, CN

An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs

He J., Bian W., Tao Y., Li B., Chen Y., Peking University, CN

A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete [...]

Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Universidade Federal da Bahia - UFBA, BR

The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined [...]