Papers – Page 26 – TechConnect Briefs

Flexible virtual source compact model for fast modeling of new channel materials and device architectures

The end of bulk silicon-based transistor technology has often been predicted in the scientific and technical literature. As a result, many new channel materials (such as III-V semiconductors, 2D materials, nanowires and -tubes) and device [...]

A Compact Model for SiC Junction Barrier Schottky Diode for High-Voltage and High-Temperature Applications

Navarro D., Herrera F., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Takusagawa M., Kobayashi J., Hara M., Hiroshima University, JP

SiC-based Junction Barrier Schottky (JBS) Diode is employed in power conversion applications because of its low-leakage current and high switching speed characteristics even at elevated temperatures. JBS structure originates from Schottky Barrier Diode (SBD) structure, [...]

ASM-HEMT: Industry Standard GaN HEMT Model for Power and RF Applications

Ghosh S., Ahsan S.A., Khandelwal S., Pampori A., Dangi R., Chauhan Y.S., IIT Kanpur, IN

HEMTs based on GaN have become immensely ubiquitous in the past decade and offer a strong competition to mature technologies like silicon primarily due to the superior characteristics offered by the GaN material system over [...]

A Predictive Resistive RAM Compact Model with Synaptic Behavior for Circuit Simulations

Lee J.W., Hsu C.-H., Chiang M-H, National Cheng Kung University, TW

Artificial intelligence has come to its new era with the fast growth of machine learning algorithm. However, the conventional Von-Neumann architecture could consume excessive energy during the training process. At this moment, the memristor sheds [...]

Experiment and Model for Distance-Dependent Mismatch

Lu N., Zamdmer N., Wachnik R., IBM, US

We study distance-dependent mismatch and spatial correlation problems both experimentally and theoretically. The two problems are intimately connected. We present our hardware results and, using the relationship between mismatch and correlation, show that the relationship [...]

Analytical Surface Potential Solution for Low Effective Mass Channel Common Double Gate MOSFET

Chakraborty A.S., Jandhyala S., Mahapatra S., Indian Institute of Science, Bangalore, IN

Obtaining an accurate although computationally efficient analytic solution for surface potential is the key step towards developing compact model for Low Effective Mass channel material Common Double Gate (CDG) MOSFETs [1]. In our previous work [...]

Real-Time Density Functional Tight Binding: A New Computational Tool for Probing Electronic Properties of Plasmonic Systems

Ilawe N.V., Wong B.M., University of California Riverside, US

Light-harvesting systems and plasmonic materials continue to garner significant attention due to their importance in both energy conversion and sensitive detection technologies. However, several challenges exist in improving their performance: these electronic multifunctional systems are [...]

Electrochemical Nanoimprinting of Silicon: A Direct Patterning Approach

Azeredo B., Arizona State University, US

Soft-lithography and nanoimprinting lithography have been critical in manufacturing 3D features with sub-20 nm resolution onto polymeric materials which have often been employed for producing micro and nanoscale optical materials and surfaces. However, methods for [...]

Visible-Blind Ultraviolet Photodetectors Based on NiO/ZnO NRs with Poly-(N-vinylcarbazole) Intermediate Layer

Huang D-W, Lin H-P, Perng D-C, National Cheng Kung University, TW

Ultraviolet (UV) photodetectors (PDs) have useful applications including flame detection, environmental monitoring, early missile threat warning systems, etc. UV PDs based on wide-band-gap materials, such as GaN and ZnO have a visible-blind advantage over silicon-based [...]

Design of 160-Channel Si3N4 based AWG-Spectrometer for Medical Applications

Seyringer D., Burtscher C., Edlinger J., Maese-Novo A., Muellner P., Hainberger R., Kraft J., Koppitsch G., Meinhardt G., Sagmeister M., Vorarlberg University of Applied Sciences, AT

We present the design of 160-channel, 50-GHz Si3N4 based AWG applying our proprietary AWG-Parameters tool. For the simulations of the AWG layout, we used PHASAR photonics tool from Optiwave. The simulated transmission characteristics were then [...]