short-channel effects – TechConnect Briefs

A Novel GaAs-on-Si MOSFET for Analog Integrated Circuits

Jawake A.V., Aher S.R., Borse H.S., Bhosale K.S., Patil G.C., Patil S.R., Patil G.C., Patil S.R., JSPM’s Rajarshi Shahu College of Engineering, IN

Over the last few decades silicon has proven its superiority in the semiconductor world with respect to properties like small mass, good carrier capability, low cost, maximum wafer diameter etc. However, since on-state drive current [...]

Dynamic Charge Sharing modeling for surface potential based models

Quenette V., Rideau D., Clerc R., Tavernier C., Jaouen H., ST Microelectronics, FR

Technology tuning by design means have been recently pointed out. Particularly, the possibility of back bias polarization (VB) to tune the threshold voltage (VT) has been commonly adopted in advanced devices. As a consequence the [...]

Embedded non–volatile memory study with surface potential based model

Garetto D., Zaka A., Quenette V., Rideau D., Dornel E., Clark W.F., Minondo M., Tavernier C., Rafhay Q., Clerc R., Schmid A., Leblebici Y., Jaouen H., STMicroelectronics, FR

Coupling coefficients calculation is known to be a critical issue in Non-Volatile Memory cell compact modelling. To this purpose, the accuracy of the capacitive network method can be significantly improved using the charge balance method, [...]

Impact of Non-Uniformly Doped and Multilayered Asymmetric Gate Stack Design on Device Characteristics of Surrounding Gate MOSFETs

Kaur H., Kabra S., Haldar S., Gupta R.S., University of Delhi, IN

In the present work, a new structural concept, non-uniformly doped multilayered asymmetric gate stack (ND-MAG) surrounding gate MOSFET has been proposed and it has been demonstrated using analytical modeling and simulation that ND-MAG SGT leads [...]

Tunnel Field Effect Transistor (TFET) with Strained Silicon Thinfilm Body for Enhanced Drain Current and Pragmatic Threshold Voltage

Kumar M.J., Saurabh S., Indian Institute of Technology, IN

Quantum tunneling devices are very promising as they have very low leakage current and show good scalability. However, the most serious drawback for tunneling devices hampering their wide-scale CMOS application is their low on-current and [...]

Explicit Short Channel Compact Model of Independent Double Gate Mosfet

Reyboz M., Rozeau O., Poiroux T., Martin P., Cavelier M., Jomaah J., CEA-LETI, FR

This paper describes an explicit short channel compact model of Independent Double Gate (IDG) MOSFET with undoped channel. The validity of this model is demonstrated by comparison with Atlas simulations. The model was implemented in [...]

Compact Model for Short Channel Effects in Source/Drain Engineered Nanoscale Double Gate (DG) SOI MOSFETs

Kranti A., Armstrong G.A., Queen’s University of Belfast, UK

In the present paper, a compact model for short channel effects (SCEs) in source/drain engineered nanoscale DG MOSFET, is proposed for the first time and the impact of spacer width (s), lateral source/drain doping gradient [...]

Compact Model of drain-current in Double-Gate MOSFETs including carrier quantization and short-channel effects

Loussier X., Munteanu D., Autran J-L, Harrison S., Cerutti R., L2MP, FR

Double-Gate (DG) structure has been in the last years the object of intensive research because its enormous potentiality to push back the integration limits to which conventional devices are subjected. Although the operation of DG [...]

Scalable MOSFET Short-channel Charge Model in All Regions

See G.H., Chiah S.B., Zhou X., Chandrasekaran K., Shangguan W., Zhu Z., Lim G.H., Pandey S.M., Cheng M., Chu S., Hsia L.-C., NTU, SG

Short-channel effects (SCEs) for both intrinsic chargesand extrinsic capacitances need to be modeled when theMOSFET channel is short. The intrinsic SCEs are modeled using bulk-charge sharing and quasi-two dimensional potential barrier loweirng; extrinsic overlap capacitances [...]

Compact Modeling of Short Channel Double-Gate MOSFETs

Lu H., Liang X., Wang W., Taur Y., Univ. California, San Diego, US

This talk presents analytical modeling of short-channel effect in double-gate MOSFETs. 2-D Poisson’s eq. is solved as a boundary value problem in subthreshold. 2-D potential distribution and subthreshold currents have been calculated and verified by [...]