Impact of Non-Uniformly Doped and Multilayered Asymmetric Gate Stack Design on Device Characteristics of Surrounding Gate MOSFETs

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In the present work, a new structural concept, non-uniformly doped multilayered asymmetric gate stack (ND-MAG) surrounding gate MOSFET has been proposed and it has been demonstrated using analytical modeling and simulation that ND-MAG SGT leads to suppression of short channel and hot carrier effects besides also improving the transport efficiency and gate controllability as compared to UD devices. The device design thus provides an effective solution to the detrimental issues such as short channel effects besides also improving the device performance and thus allows the device to be scaled more effectively.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 889 - 892
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4200-8505-1