Impact of High-k gate oxide on intrinsic device Performance of Junctionless Transistor (JLT)

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Junctionless transistor (JLT) attracts the researchers due to its advantages over conventional MOSFET’s namely high scalability, simple process flow, and low thermal budget. However, scaling of JLT below 20 nm regime results increase in off [...]

Impact of Gate Oxide Thickness and Channel Thickness on DC Performance of Carbon Nanotube Tunnel FET

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The scaling down of conventional complementary metal–oxide–semiconductor technology is suffering from fundamental limitations. To overcome these problems, novel engineering solutions like improving the device architecture,introducing materials into the channel region with superior transport properties, and [...]