compact models – TechConnect Briefs

InGaAs FinFET Modeling Using Industry Standard Compact Model BSIM-CMG

Khandelwal S., Duarte J.P., Paydavosi N., Chauhan Y.S., Gu J.J., Si M., Ye P.D., Hu C., University of California-Berkeley, US

In this paper, we present modeling results for InGaAs FinFETs using the industry standard compact model BSIM-CMG. We show that BSIM-CMG produces excellent fits to the measured I-V data of these devices. The difference seen [...]

Modeling of Spatial Correlations in Process, Device, and Circuit Variations

Lu N., IBM, US

We present an innovative method to model the spatial correlations in semiconductor process and device variations or in VLSI circuit variations. Without using the commonly adopted PCA approach, we give a very compact expression to [...]

Adaptable Simulator-independent HiSIM2.4 Extractor

Gneiting T., Eguchi T., Grabinski W., AdMOS GmbH Advanced Modeling Solutions, DE

This paper presents a method and its software implementation to extract Spice parameters of the HiSIM2.4 model. The completed flow of dedicated parameter extraction procedures is currently designed for the HiSIM2.4 model and can be [...]

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types

Park J-E, Park S-J, Liang C-H, Assenmacher J., Watts J., Park J-E, Park S-J, Wachnik R., IBM, US

MOSFET device of similar design but different threshold voltage are often built on a single chip. It is important to be able to simulate with a compact model the variation of such devices including the [...]

Modeling Small MOSFETs using Ensemble Devices

Watts J.S., Pino R., Trombley H., IBM, US

This paper discribes methodogy to correctly model small area MOSFETs including paremeter extraction and centering using multiple parallel devices for accurate measurments. The method includes adjusting the measured data to recover true single finger behavior, [...]

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

Galup-Montoro C., Schneider M.C., Arnaud A., Klimach H., Universidade Federal de Santa Catarina, BR

This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, [...]

A Technology-Independent Model for Nanoscale Logic Devices

Frank M.P., University of Florida, US

In this paper we describe a class of technology-independent nano-device models, motivated from fundamental physical considerations, and give some examples of their applications in nanocomputer architecture and systems engineering. These models rest on recent insights [...]

Keywords: compact models