This paper presents a method and its software implementation to extract Spice parameters of the HiSIM2.4 model. The completed flow of dedicated parameter extraction procedures is currently designed for the HiSIM2.4 model and can be a potential base to cover upcoming HiSIM-LDMOS model which was recently selected by the CMC as a new standard for High Voltage MOSFETs. A unique feature of this approach is that the underlying measured data base is collected independently and can be accessed to generate any standard MOSFET models. The parameter extraction routines are based on highly efficient direct extractions, taking into account all HiSIM2.4 modeled effects important for advanced CMOS devices with extremely reduced device feature sizes in the process nodes 65/45nm and beyond. Moreover, the set of local optimizations and interactive tuners is available for all standard IV, CV curves and S-par characteristics as well as special PCM like diagrams to guarantee a high level of the simulation model scalability. Besides the basic DC and CV parameters, high frequency effects are taken into account to enable the usage of the simulation model in analog/RF designs as well. Furthermore, the procedures are highly automated to assure the accuracy and quality of released Spice-level models.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 783 - 786
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling