van Langevelde R. – TechConnect Briefs

A PSP based scalable compact FinFET model

Smit G.D.J., Scholten A.J., Serra N., Pijper R.M.T., van Langevelde R., Mercha A., Gildenblat G., Klaassen D.B.M., NXP Semiconductors, NL

A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly [...]

High-Voltage LDMOS Compact Modeling

Willemsen M.B., van Langevelde R., Klaassen D.B.M., Philips Research, NL

In compact modeling of high-voltage LDMOS devices often a sub-circuit approach is used. While for the channel region a standard compact MOS model (for example BSIM4, MM11 or PSP) is used, the drift region is [...]

Theory and Modeling Techniques used in PSP Model

Gildenblat G., Li X., Wang H., Wu W., Jha A., van Langevelde R., Scholten A.J., Smit G.D.J., Klaassen D.B.M., Pennsylvania State University, US

This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include [...]

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Scholten A.J., Tiemeijer L.F., van Langevelde R., Zegers-van Duijnhoven A.T.A., Havens R.J., Zegers-van Duijnhoven A.T.A., Venezia V.C., Klaassen D., Philips Research Laboratories Eindhoven, NE

The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the [...]

Recent Enhancements of MOS Model 11

van Langevelde R., Scholten A.J., Klaassen D.B.M., Philips Research Laboratories, NL

MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, [...]

Compact Modelling of High-Voltage LDMOS Devices

Aarts A.C.T., van der Hout R., van Langevelde R., van der Hout R., van Langevelde R., Scholten A.J., Willemsen M.B., Klaassen D.B.M., Philips Research Laboratories, NE

In this paper various modelling approaches for Laterally Double-Di used MOS (LDMOS) devices are discussed. Characterisation results for the new compact LDMOS model called MOS Model 20 are presented. Measurements of the dc-current, its conductances [...]

Authors: van Langevelde R.

A PSP based scalable compact FinFET model

High-Voltage LDMOS Compact Modeling

Theory and Modeling Techniques used in PSP Model

Noise Modeling with MOS Model 11 for RF-CMOS Applications

Recent Enhancements of MOS Model 11

Compact Modelling of High-Voltage LDMOS Devices

Introduction to PSP MOSFET Model

Advanced Compact Models for MOSFETs

Recent Enhancements of MOS Model 11

Noise Modeling with MOS Model 11 for RF-CMOS Applications