Noise Modeling with MOS Model 11 for RF-CMOS Applications

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The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the gate resistance, a more significant enhancement of the gate current noise. The experimental results are accurately describe by a non-quasi-static RF model, based on channel segmentation. Experimental evidence is shown for two additional noise mechanisms: (i) avalanche noise associated with the avalanche current from drain to bulk, and (ii)j shot noise in the direct-tunneling gate leakage current.

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Journal: TechConnect Briefs
Volume: Technical Proceedings of the 2005 Workshop on Compact Modeling
Published: May 8, 2005
Pages: 331 - 334
Industry sector: Sensors, MEMS, Electronics
Topics: WCM - Compact Modeling
ISBN: 0-9767985-3-0