Miyake M. – TechConnect Briefs

HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX

Miura-Mattausch M., Kikuchihara H., Feldmann U., Nakagawa T., Miyake M., Iizuka T., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP

The Silicon-On-Thin-Buried-Oxide (SOTB) transistor is a descendant of the conventional SOI MOSFET with thin Silicon and BOX layers. Many different structure and material variations are possible, where the choice of a thicker BOX may be [...]

Modeling of Chain History Effect based on HiSIM-SOI

Fukunaga Y., Miyake M., Toda A., Kikuchihara K., Baba S., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect [...]

Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow

Ueno F., Tanaka A., Miyake M., Iizuka T., Yamamoto T., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

High-voltage devices are utilized for a variety of applications, with application voltages ranging from a few volts to a few hundred volts. To develop efficient circuits for the variety of applications, accurate modeling of the [...]

Modeling of the impurity-gradient effect in high-voltage MOSFETs

Maekawa Y., Fukushima K., Tanaka A., Kikuchihara H., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Two major high-voltage MOSFET types are commonly used by semiconductor industries. One has a symmetrical structure, and the other has a laterally-diffused asymmetric structure called LDMOS. Here our focus is the LDMOS structure, where an [...]

Complete Surface-Potential Modeling Approach Implemented in the HiSIM Compact Model Family for Any MOSFET Type

Miura-Mattausch M., Miyake M., Kikuchihara H., Feldmann U., Amakawa S., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP

Many possible future device structures are investigated in parallel to obtain highest performance features. It has been shown that an SOI-MOSFET with a thin body enables both high device performances and suppression of statistical variations. [...]

High-Voltage MOSFET Model Valid for Device Optimization

Oritsuki Y., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Kikuchihara U. Feldmann H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Market for power devices are expanding due to the global warming problem. It is expected that the power devices play an important role for stopping the problem. For this purpose accurate compact models are highly [...]

HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage Applications

Oritsuki Y., Yokomiti M., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range [...]

Modeling of Floating-Body Devices Based on Complete Potential Description

Sadachika N., Murakami T., Ando M., Ishimura K., Ohyama K., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Advanced MOSFETs exploit the carrier confinement to suppress the short-channel effect, which is realized by reducing the bulk layer thickness. The ongoing developments of the multi-gate MOSFET as well as the fully-depleted SOI-MOSFET with ultra [...]

HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

Miyake M., Sadachika N., Matsumoto K., Navarro D., Ezaki T., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Hiroshima University, JP

For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority [...]

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Miura-Mattausch M., Sadachika N., Miyake M., Navarro D., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Inagaki R., Furui Y., Hiroshima University, JP

HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an [...]