The Surface-Potential-Based model HiSIM-SOI and its Application to 1/f Noise in Fully-Depleted SOI-MOSFETs

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Fully-depleted SOI-MOSFET model HiSIM-SOI for circuit simulation is developed. HiSIM-SOI solves surface potentials at all three SOI-surfaces along the depth direction self-consistently. Besides comparison to measured I-V characteristics, the model is verified with 1/f noise [...]

HiSIM: Self-Consistent Surface-Potential MOS-Model Valid Down to Sub-100nm Technologies

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Surface-potential-basedMOSFET modeling is shown to be the right direction. Model parameters reflect the physical device parameters of advanced technologies directly, and can therefore be even scalable with technology changes. These advantages are demonstrated with HiSIM, [...]