US – Page 396 – TechConnect Briefs

Linear Cofactor Difference Extrema of MOSFETs Drain Current and Their Application in Parameter Extraction

He J., Xi X., Chan M., Niknejad A., Hu C., University of California-Berkeley, US

The linear cofactor difference extrema of metal-oxide-semiconductor field effect transistor (MOSFET) drain current are presented in this paper and their application to extract MOSFET parameters is demonstrated. The extrema of the characteristic drain current are [...]

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

He J., Xi X., Chan M., Niknejad A., Hu C., University of California-Berkeley, US

An exact analytic model for undoped (or lightly doped) body MOSFETs has been derived in this paper by incorporating the mobile charge density in the 1-D Poissons equation. The formulation starts with deriving a close [...]

A Non-Charge-Sheet Analytic Theory for Undoped Symmetric Double-Gate MOSFETs from the Exact Solution of Poissons Equation using SPP Approach

He J., Xi X.i, Chan M., Niknejad A., Hu C., University of California-Berkeley, US

A non-charge-sheet based analytic theory for undoped symmetric double-gate MOSFETs is presented in this paper. The formulation is based on the exact solution of the Poissons equation to solve for electron concentration directly rather than [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

Advanced MOSFET Modeling for RF IC Design

Cheng Y., Skyworks Solutions, US

In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with [...]

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

McAndrew C., Motorola, US

This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived [...]

Modeling and Characterization of Wire Inductance for High Speed VLSI Design

Arora N.D., Song L., Cadence Design Systems, US

Ever increasing circuit density, operating speed, faster on-chip rise times, use of low resistance Copper (Cu) interconnects, and longer wire lengths due to high level of integration in VLSI chip designs, have necessitated the need [...]

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Xi X., He J., Heyderi B., Dunga M., Lin C.H., Heyderi B., Wan H., Chan M., Niknejad A.M., Hu C., University of California at Berkeley, US

This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based [...]

Technology Limits and Compact Model for SiGe Scaled FETs

Dutton R.W., Choi C-H, Stanford, US

Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the [...]

Sub-Threshold Electron Mobility in SOI-MESFETs

Khan T., Vasileska D., Thornton T.J., Arizona State University, US

Micropower circuits use subthreshold MOSFETs that consume minimal power resulting from the combination of ultra-low drain currents (10-11 < Id < 10-5 A/µm) and small drain voltages required for saturation (Vd sat ~150-200mV). Unfortunately, sub-threshold [...]