US – Page 397 – TechConnect Briefs

Principles of Metallic Field Effect Transistor (METFET)

Rotkin S.V., Hess K., University of Illinois at Urbana-Champaign, Beckman Institute for Advanced Science and Technology, US

Field effect transistors in current use are semiconductor devices. The scaling trend to nanometer dimensions calls for ever higher doping and channel conductance of these devices. Ultimately one desires a conductance close to that of [...]

Hierarchical Simulation Approaches for the Design of Ultra-Fast Amplifier Circuits

Desai J., Aboud S., Chiney P., Osuch P., Branlard J., Goodnick S., Saraniti M., IIT/Rush University, US

In this work, the design and development of ultra-fast amplifier circuits is investigated using a combination of simulation tools, including PSPICE. A fully depleted SOI transistor is designed based on state-of-the-art fabricated devices. To calibrate [...]

A Technology-Independent Model for Nanoscale Logic Devices

Frank M.P., University of Florida, US

In this paper we describe a class of technology-independent nano-device models, motivated from fundamental physical considerations, and give some examples of their applications in nanocomputer architecture and systems engineering. These models rest on recent insights [...]

Full-band Particle-based Simulation of Germanium-On-Insulator FETs

Beysserie S., Branlard J., Aboud S., Goodnick S.M., Thornton T., Saraniti M., Illinois Institute of Technology, US

We model and simulate novel fully depleted (FD) sub-50nm gate lengths MOSFET structures using a full-band particle simulator based on the Cellular Monte Carlo (CMC) method that provides an accurate transport model at the high [...]

Spectral Analysis of Channel Noise in Nanoscale MOSFETS

Casinovi G., Georgia Institute of Technology, US

This paper describes an algorithm for numerical computation of the power spectral density (PSD) of channel noise in nanoscale MOSFETs. Noise generation phenomena inside the channel are modeled as random processes, represented by distributed sources [...]

Microscope Slide Electrode Chamber for Nanosecond, Megavolt-Per-Meter Biological Investigations

Sun Y., Vernier P.T., Behrend M., Marcu L., Gundersen M.A., University of Southern California, US

Nanosecond pulsed electric fields pass through the external membranes of biological cells (which have typical response times much greater than nanoseconds) and perturb fast-responding intracellular structures and processes. To enable real-time imaging and investigation of [...]

Direct Scanning Laser Writing of 3D Multilayer Microstructures

Yu H., Li B., Zhang X., Boston University, US

Material processing with lasers is an expanding field since it not only makes manufacturing cheaper, faster, cleaner, and more accurate but also opens up entirely new technologies and manufacturing methods that are simply not available [...]

Micro Actuator Array based on Ionic Polymer with Patterned Self-Assembled Au Electrode

Le Guilly M., Xu C., Taya M., Kuga Y., University of Washington, US

A new fabrication technique is proposed to create electrodes on thin ionic polymer membranes for micro actuator applications. The technique consists in plasma deposition of a thin (a few nm) allylamine coating on the membrane [...]

Ferrofluid Masking for Lithographic Applications

Yellen B., Friedman G., Drexel University, US

A novel self-aligned “soft masking” method that is compatible with traditional photolithographic processes is demonstrated. This method uses a suspension of ultra-fine iron oxide grains (ferrofluid) to protect or de-protect selected areas of a magnetically [...]

Resonant Frequency Shift of Torsional Acutators due to Electrostatic Force

Xiao Z., Sun Y., Li B., Lee S., Sidhu K.S., Chin K.K., Farmer K.R., New Jersey Institute of Technology, US

We have investigated the effect of natural frequency shift in single-crystal silicon, rectangular, electrostatic torsion actuators due to the electrostatic force. The electrostatic actuator was fabricated by using ultra-thin silicon wafer, SU-8 thermal compression bonding, [...]