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Circuit Modeling and Simulation of Integrated Microfluidic Systems

Chatterjee A.N., Aluru N.R., Beckman Institute, US
A combined circuit-device model for the analysis of integrated microfluidic system is presented. The complete model of an integrated microfluidic device incorporates modeling of the fluidic transport, chemical reaction, reagent mixing and separation. The microfluidic [...]

Contact Force Models, including Electric Contact Deformation, for Electrostatically Actuated, Cantilever-Style, RF MEMS Switches

Coutu_Jr. R.A., Kladitis P.E., Air Force Institute of Technology, US
Electrostatically actuated, cantilever-style, metal contact, radio frequency (RF), microelectromechanical systems (MEMS) switches depend on having adequate contact force to achieve desired, low contact resistance. In this study, contact force equations that account for beam tip [...]

System-Level Optical Interface Modeling for Microsystems

Kurzweg T.P., Sharma A.S, Bhat S.K., Levitan S.P., Chiarulli D.M., Drexel University, US
In this paper, we present an accurate and computationally efficient system-level optical propagation technique suitable for the modeling of optical interfaces. Our technique is based on extensions to the angular spectrum technique used to solve [...]

Mixed-Domain Simulation of Step-Functional Voltammetry with an Insoluble Species for Optimization of Chemical Microsystems

Martin S.M., Strong T.D., Gebara F.H., Brown R.B., University of Michigan, US
Microinstruments with integrated sensors and electronics are well adapted for remote environmental monitoring applications. Optimization of these microinstruments, however, has been difficult due to a previous lack of mixed-domain simulation environments. This work presents a [...]

Scalability and High Frequency Extensions of the Vector Potential Equivalent Circuit (VPEC)

Mukherjee B., Wang L., Wang P., Wang L., Wang P., Pacelli A., Stony Brook University, US
We present a complete modeling technique for inductive parasitics, based on the vector potential equivalent circuit (VPEC) topology. Novel algorithms for layout extraction and sparsification are introduced. Examples are discussed in terms of CPU time, [...]

Pareto-Optimal Modeling for Efficient PLL Optimization

Tiwary S.K., Velu S., Rutenbar R.A., Mukherjee T., Carnegie Mellon University, US
Simulation-based synthesis tools for analog circuits [1,2] face a problem extending their sizing/biasing methodology to larger block-level designs such as phase lock loops or converters: the time to fully evaluate (i.e., to fully simulate) each [...]

New Capabilities for Verilog-A Implementations of Compact Device Models

Mierzwinski M., OHalloran P., Troyanovsky B., Mayaram K., Dutton R.W., Tiburon Design Automation, US
Acceptance of a model requires its availability in main-stream simulators, yet it can be difficult to get a new model into commercial simulators. In this paper we present simulation results using a compiled Verilog-A architecture [...]

Predicting the SOI History Effect Using Compact Models

Na M-H, Watts J.S., Nowak E.J., Williams R.Q., Clark W.F., IBM Corporation, US
A simple and effective compact model methodology that predicts the history effect in silicon-on-insulator (SOI) is discussed. In this study we employ three physical parameters to modify the body-potentials of SOI FETs in an inverter [...]

Automatic BSIM3/4 Model Parameter Extraction with Penalty Functions

Mahotin Y., Lyumkis E., Integrated Systems Engineering, Inc., US
The first successful automatic extraction of BSIM3/4 model parameters based on numerical optimization of a functional, which includes penalty functions, is reported. The penalty functions always keep the values of the model parameters within a [...]

Analytic Formulae for the Impact Ionization Rate for use in Compact Models of Ultra-Short Semiconductor Devices

Morris H.C., DePass M.M., Abebe H., San Jose State University, US
Quade, Schöll and Rudan have showed that in the limit of large screening length the impact ionization rate per unit time can be expressed as an integral involving the electron density function. The assumption of [...]

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