Modeling & Simulation of Microsystems


On Statistical Variation of MOSFETs Induced by Random-Discrete-Dopants and Random-Interface-Traps

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Abstract – In this work, we statistically study characteristic fluctuation of 16-nm-gate high-/metal gate (HKMG) MOSFETs by random-discrete-dopants (RDDs) inside silicon channel and random-interface-traps (RITs) at high-k/silicon interface. Randomly generated devices with three-dimensional (3D) RDDs [...]

Simulation of Gas Flows in Micro Devices by Solving the Boltzmann Kinetic Equation

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Numerical modeling of gas flows in micro devices has practical value due to the high application opportunities of such devices to the relevant industries. Gas behavior is accurately described by the Boltzmann equation of the [...]

Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 978-1-4665-6275-2