Nanoelectronics – Page 76 – TechConnect Briefs

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

Gehring A., Grasser T., Kosina H., Selberherr S., Institute for Microelectronics, Vienna, AT

We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and [...]

Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers

Choi H., Jeong Y., Park Y., Lee J., Leem J-Y, Leem J-Y, Jeon M., Jeong Y., Inje University, KR

We investigated the effect of AlGaAs/GaAs superlattice barriers on the optical properties of InAs quantum dots (QDs) by using photoluminescence (PL) spectroscopy. The samples used in the present work were grown by molecular beam epitaxy [...]

A Study on Growth of Ultrathin Silicon Dioxide Films by Rapid Thermal Oxidation

Zeng T., Doumanidis H.C., North Carolina State University, US

Silicon dioxide thin films are the basic components for microelectronics and other micro technologies. As the size of the transistors and relevant micro devices shrinks for faster and smaller chips and other microsystems, growth of [...]

Coupled Multiphysics Modeling of Semiconductor Lasers

Sikorski Z., Jiang Y., Czyszanowski T., Przekwas A., Turowski M., CFD Research Corporation, US

Comprehensive models of semiconductor lasers are required to predict realistic behavior of various laser devices for the spatially nonuniform gain that results due to current crowding. Nonuniform gain has visible effect on laser dynamics and [...]

A Methodology of Field-Emission Modeling with Space-Charge Effects

Tsai T-H, Tang H-K, Yang Y-J, National Taiwan University, TW

In this paper, we present a methodology for modeling and simulating 3D field-emission devices (FED) with space-charge effect. This approach applies a boundary-element-method (BEM) electrostatics solver [1] and an adaptive explicit integrator. The space charge [...]

Fullband Particle-based Simulation of Optical Excitation in Silicon Pin Diodes

Wigger-Aboud S., Saraniti M., Goodnick S., Brodschelm A., Leitenstorfer A., Rush Medical Center and Illinois Institute of Technology, US

A fullband particle-based simulator is used to model photo-generated electron-hole pairs in Si. This work is motivated by experimental measurements of optically excited Si pin diodes. Results will be compared qualitatively to investigate charge transport [...]

Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains

Morris H.C., De Pass M.M., San Jose State University, US

As MOSFET sizes have been reduced to nano-scale dimensions, existing models of device behavior, such as the drift diffusion equations, cease to be valid. In the nano domain, more fundamental equations, such as the Boltzmann [...]

Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers

Piprek J., Bregy A., Jayaraman V., Chiu Y-J, Bowers J., University of California, US

For more than a decade, long-wavelength vertical-cavity lasers (VCLs) for fiber-optic applications are subject of intense research efforts. GaAs-based VCLs emitting at shorter wavelength (0.85-micron) have been commercialized successfully, however, the challenge of transferring this [...]

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

Kunz V.D., de Groot C.H., Anteney I.M., Abdul-Rahim A.I., Hall S., Hemment P.L.F., Wang Y., Ashburn P., University of Southampton, UK

In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates [...]

Nanoscale Control of Light-induced Degradation in Amorphous Silicon

Shirai K., Yamazaki Y., Katayama-Yoshida H., ISIR, Osaka University, JP

The major problem of amorphous silicon solar cell is the light-induced degration. A recent experiment shows that this problem may be solved by a CN treatment. In this paper, microscopic mechanism of this CN treatment [...]