Compact Modeling

Accuracy of Surface-Potential-Based Long-Wide-Channel MOS Transistor Compact Models

Jie B.B., Sah C-T, University of Florida, US

Frequently asked questions are addressed, “How accurate are the approximate long-and-wide-channel MOS transistors baseline models that have been used to develop the compact models for computer-aided circuit designs?” Three commonly used surface-potential (US=q*PSIS/kT) approximations of [...]

Benchmark Tests on Conventional Surface Potential Based Charge-Sheet Models And the Advanced PUNSIM Development

He J., Song Y., Niu X., Zhang G., Zhang X., Zhang G., Zhang X., Huang R., Chan M., Wang Y., Peking University, CN

This paper reports the benchmark test results of surface potential solution, inversion charge and channel current calculation, and short-channel effect model of various surface based charge-sheet models and our PUNSIM development to breakthrough the drawbacks [...]

An Improved MOS Transistor Model with an Integrated Mobility Model

Hauser J.R., N.C. State University, US

A new and improved MOS I-V model will be presented using a more exact approach to include surface field dependent mobility effects. Mobility degradation effects are included in the basic I-V differential equation as opposed [...]

Theory and Modeling Techniques used in PSP Model

Gildenblat G., Li X., Wang H., Wu W., Jha A., van Langevelde R., Scholten A.J., Smit G.D.J., Klaassen D.B.M., Pennsylvania State University, US

This paper describes theoretical foundation and details of the new compact modeling techniques used in the advanced surface-potential-based compact MOSFET model PSP, jointly developed by the Pennsylvania State University and Philips Research. Specific topics include [...]

Symbolic charge-based MOSFET model

Galup-Montoro C., Schneider M.C., Federal University of Santa Catarina, BR

The new generation of compact MOSFET models provides accurate current, charge, capacitance and noise characteristics as numerical outputs of a rather complicated set of internal equations specific to each model. Clearly, numerical circuit simulation is [...]

Topic: Compact Modeling

Accuracy of Surface-Potential-Based Long-Wide-Channel MOS Transistor Compact Models

Benchmark Tests on Conventional Surface Potential Based Charge-Sheet Models And the Advanced PUNSIM Development

An Improved MOS Transistor Model with an Integrated Mobility Model

Theory and Modeling Techniques used in PSP Model

Symbolic charge-based MOSFET model

Self-Consistent Models of DC, AC, Noise and Mismatch for the MOSFET

New Capabilities for Verilog-A Implementations of Compact Device Models

Predicting the SOI History Effect Using Compact Models

Physics-Based Scalable Threshold-Voltage Model for Strained-Silicon MOSFETs