TechConnect Proceedings Papers
Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs
Nguyen C.D., Jungemann C., Neihues B., Meinerzhagen B., Sedlmeir J., Molzer W., ITEM-University of Bremen, DE
In this work a quantum correction model for the hole inversion layer based on the Improved Modified Local Density Approximation (IMLDA) and a corresponding channel mobility model compatible to the IMLDA quantum corrected spatial p-density [...]