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An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs
An explicit carrier-based model for the undoped SRG MOSFETs has been developed by an accurate yet analytic carrier concentration approximation. This new explicit model requires no numerical iteration but more accurate and computation efficient, thus [...]
A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs
A carrier-based analytical model for undoped (lightly doped) UTB-SOI MOSFETs is derived by solving the Poisson equation coupled to the Pao-Sah current formulation. It is also shown that the predicted I-V characteristics are in complete [...]
Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs
The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined [...]
LINFET: A BSIM class FET model with smooth derivatives at Vds=0
The linearity of compact transistor models near Vds=0 is important for designing RF circuits. Currently compact models such as BSIM3/4 have problems around this bias point due to discontinuities in the derivatives. Recently, the PSP [...]
PTAT voltage generator based on an MOS voltage divider
Little has been published on the use of charge-based compact models as tools for variable operating temperature design. We analyzed an MOS voltage divider applying the ACM model obtaining an equation relating the voltage at [...]
HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications
Miyake M., Sadachika N., Matsumoto K., Navarro D., Ezaki T., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Hiroshima University, JP
For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority [...]
Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models
See G.H., Zhou X., Chandrasekaran K., Chiah S.B., Zhu G.J., Zhu Z.M., Lim G.H., Wei C.Q., Lin S-H, Zhu G.J., Zhu Z.M., Nanyang Technological University, SG
One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The [...]