Papers – Page 319 – TechConnect Briefs

Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices

We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]

Model the AlGaN/GaN High Electron Mobility Transistors

Wang Y., Tsnghua University, CN

We developed a set of physics-based compact model of GaN HEMT for RF and high power applications. The model includes close-formed I-V, the C-V characteristics, high frequency noise characteristics, self heating effect, small signal and [...]

An analytical 2DEG model considering the two lowest subbands

Zhang J., Zhou X., NTU singapore, SG

A general 2DEG density model that considers the lowest two subbands (subband split) as well as the subthrehold region is derived and validated through comparison with the numerical (exact) solutions. Good agreement is obtained between [...]

Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model

Enz C.C., Mangla A., Chalkiadaki M.-A., Ecole Polytechnique Fédérale de Lausanne (EPFL), CH

The design of analog circuits strongly relies on the accuracy of the models available in the circuit simulators. The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 [...]

BSIM6: Symmetric Bulk MOSFET Model

Chauhan Y.S., Karim M.A., Venugopalan S., Khandelwal S., Niknejad A., Hu C., University of California-Berkeley, US

BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry etc. [...]

Modeling Spray-Coating of Thin Film Solar Cells

Eslamian M., Texas A&M University-Corpus Christi, US

Modeling of spray coating process of thin film solar cells is investigated.

Analytical Drain Current Model for Damaged Gate All Around (GAA) MOSFET Including Quantum and Velocity Overshoot Effects

Gautam R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN

The Cylindrical Gate All Around (GAA) Nanowire MOSFET exhibits strong drive currents and reduced short channel effects due to enhanced gate control and high surface quality of NW channels [1]. Apart from short channel immunity, [...]

Drift Velocity Calculation in Si Using an Analytical Model for the Phonon Dispersion

Gada M., Vasileska D., Raleva K., Goodnick S.M., Arizona State University, US

It is well known that crystalline silicon is the material of choice for fabrication of integrated circuits because silicon wafers are cheap and silicon dioxide is abundant in nature. Properties of the crystalline silicon have [...]

Precise Simulation of Freezing Transitions

Nayhouse M., Orkoulas G., UCLA, US

Despite recent advances, precise simulation of freezing transitions remains a challenging task. In this work, a simulation method for fluid-solid transitions, based on a modification of the constrained cell model of Hoover and Ree, is [...]

Interfacial effects and diffusion transport regimes in nanofluidic systems

Ziemys A., Milosevic M., Ferrari M., Kojic M., The Methodist Hospital Research Institute, US

Because the Peclet number is very small for nanofluidic systems, diffusion may be at least as important as the active mass transport. In nanoscale solid surfaces may alter fluid properties and diffusion at interface. Here, [...]