RF – Page 2 – TechConnect Briefs

A Compact Model for Temperature and Frequency Dependence of Spiral Inductor

Xu Y.Z., Watt J.T., Altera Corporation, US

Spiral inductors fabricated using a 90nm CMOS process have been characterized and analyzed. The extracted series resistance increases with frequency and temperature. The extracted resistance temperature coefficient exhibits a strong dependence on operating frequency. It [...]

Compact Modeling of Spiral Inductors for RF Applications

Chen J., Liou J.J., University of Central Florida, US

Recent growth in RF applications has increased the use of spiral inductors and thus demanded a more accurate model for such devices. In this paper, we develop a compact model for spiral inductors with symmetrical [...]

Effects of Scaling on Modeling of Analog RF MOS Devices

Liu Y., Cao S., Oh T.Y., Wu B., Tornblad O., Dutton R.W., Stanford University, US

This paper uses advanced TCAD tools—both IMF-based noise modeling and HB-based distortion modeling—to extract parameters of key importance in developing compact models. Additionally, the TCAD-based modeling provides insight into technology constraints that can potentially influence [...]

Compact Modeling for RF and Microwave Integrated Circuits

Niknejad A.M., Chan M., Hu C., Brodersen B., Xi J., He J., Emami S., Doan C., Cao Y., Su P., Wan H., Dunga M., Lin C.H., University of California at Berkeley, US

Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future [...]

RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction

Wan H., Su P., Fung S.K.H., Dept of EECS, UC Berkeley, US

In this paper, the BSIMSOI RF model for FDSOI MOSFET is introduced and verified. Self-heating effect plays an important role in RF S-parameter fitting and the thermal resistance needs to be correctly extracted. A new [...]

Integrated High Frequency RF Inductors with Nano/micro Patterned Ferromagnetic Cores

Zhuang Y., Vroubel M., Rejaei B., Burghartz J.N., Delft University of Technology, NL

Integration of magnetic material has been long proposed to potentially improve performance and shrink size of on-chip inductive RF/microwave components, e.g. inductors, transformers, and transmission lines, which is crucial for the development of cost-effective RF/BiCMOS [...]

RF-MEMS Voltage Tunable Capacitor using Electrostatic Forces

Lee J., Kim Y., Na D., Park S., Kyungpook National University, KR

In this paper, we have proposed a fabrication method of a RF-MEMS voltage tunable capacitor using Au-electroplating technique, which has one movable parallel plate with various structure of beams. We applied an electrostatic method and [...]

Accurate Modeling for RF Silicon MOSFET up to 15 GHz and the Parameter Extraction Methodology

Lin J., Kiat Seng Y., Jian Guo M., Manh Anh D., Nanyang Technological University, SG

The accurate method to extract a small-signal subcircuit model of MOSFET’s based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are [...]

Compact Modeling for RF and Microwave Integrated Circuits

Niknejad A.M., Chan M., Hu C., Brodersen B., Xi J., He J., Emami S., Doan C., Cao Y., Su P., Wan H., Dunga M., Lin C.H., University of California at Berkeley, US

Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future [...]

Methodology for Model Generation with Accuracy from DC to RF

Zhang X., Williams M., Liu Z., Celestry Design Technologies, US

This paper presents an example modeling flow for generating a RF CMOS model. Initially, the objectives of this modeling approach are analyzed. Then issues in test structure design are discussed. In the section of model [...]