RF – TechConnect Briefs

Surface Potential Based Compact I-V Model for GaN HEMT Devices

Chang C., He J., He X., He Y., Li C., Liu J., He J., He X., He Y., Liu J., He J., He X., He Y., Pan J., Hu G., Ren Y., SoC Key Laboratory, Peking University Shenzhen Institute and PKU-HKUST Shenzhen-Hong Kong Institution, CN

Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]

3D-printed Optical Devices with Refractive Index Control for Microwave Applications

Isakov D., Wu Y., Allen B., Stevens C.J., Grant P.S., University of Warwick, UK

Achieving sub-wavelength spatial variations in the relative permittivity εr and permeability μr to control the propagation of the electromagnetic radiation opens up many opportunities for the development of new devices with improved or novel functionality [...]

Reusable Biosensor for Detecting Diabetes by Microwave LC Resonator on Integrated Passive Design (IPD) Process

Kim E.S., Kim N.Y., Chuluunbaatar Z., Wang C., Yao Z., Adhikari K.K., Kim E.S., Kim N.Y., Kwangwoon University, KR

This works present a level-free biosensor for detecting diabetes with high sensitivity and rapidity by microwave LC resonator based on integrated passive device (IPD) technology. The structure of the proposed consists of the square meandered [...]

Analysis of Small Signal Behaviour of Transparent Gate Recessed Channel (TGRC) MOSFET for High Frequency/RF Applications

Kumar A., Gupta N., Chaujar R., Delhi Technological University, IN

In this paper, small signal behavior have been investigated for Transparent Gate Recessed Channel (TGRC) MOSFET in terms of Y-parameters and Z-parameters, the results are compared with Conventional Recessed Channel (CRC) MOSFET at THz frequency [...]

TCAD Analysis of Frequency Dependent Intrinsic and Extrinsic Parameters of GEWE-SiNW MOSFET

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, extrinsic parameters of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET is analyzed in terms of parasitics capacitances, resistances and inductances using 3D-TCAD device simulations. The extracted parameters have been compared with [...]

TCAD AC analysis of Gate Electrode Workfunction Engineering Silicon Nanowire MOSFET for High Frequency Applications

Gupta N., Kumar A., Chaujar R., Delhi Technological University, IN

In this paper, we present the quantitative investigation of the high frequency performance of Gate Electrode Workfunction Engineered Si-Nanowire (GEWE-SiNW) MOSFET up to THz and compared with its conventional counterparts using device simulators: ATLAS and [...]

Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application

Malik P., Chaujar R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN

In this work, an extended study of linearity behaviour of proposed Gate Material Engineered-Trapezoidal Recessed Channel(GME-TRC) MOSFET(Fig.1.) has been performed using ATLAS and DEVEDIT device simulators and the results so obtained are compared with Trapezoidal [...]

Microwave and RF Applications of Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC ) MOSFET

Malik P., Chajaur R., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN

In this paper, the RF performance for Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC ) MOSFET(Fig.1.) has been investigated and the results so obtained are compared with Trapezoidal Recessed Channel (TRC) MOSFET(Fig.1.), using device simulators; ATLAS [...]

Assessment of L-DUMGAC MOSFET for High Performance RF Applications with Intrinsic Delay and Stability as Design Tools

Chaujar R., Kaur R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., Semiconductor Devices Research Laboratory, IN

The paper assesses RF performance of L-DUMGAC MOSFET using ATLAS device simulator by performing AC simulations at very high frequencies, hence, proving its efficacy for high performance RF applications. Higher Gma & K; and lower [...]

Micro to Nano – Scaling Packaging Technologies for Future Microsystems

Braun T., Becker K.-F., Bauer J., Hausel F., Pahl B., Wittler O., Mrossko R., Jung E., Ostmann A., Koch M., Bader V., Minge C., Aschenbrenner R., Reichl H., Technical University Berlin, DE

As the development of microelectronics is still driving towards further miniaturization new materials, processes and technologies are crucial for the realization of future cost effective microsystems and components. These future systems will not only consist [...]