Surface Potential Based Compact I-V Model for GaN HEMT Devices

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Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers and high-power switching applications. Along with the fast [...]

Linearity Performance Assessment of Nanoscale Gate Material Engineered Trapezoidal Recessed Channel (GME-TRC) MOSFET for RFIC design and Wireless application

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In this work, an extended study of linearity behaviour of proposed Gate Material Engineered-Trapezoidal Recessed Channel(GME-TRC) MOSFET(Fig.1.) has been performed using ATLAS and DEVEDIT device simulators and the results so obtained are compared with Trapezoidal [...]

Micro to Nano – Scaling Packaging Technologies for Future Microsystems

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As the development of microelectronics is still driving towards further miniaturization new materials, processes and technologies are crucial for the realization of future cost effective microsystems and components. These future systems will not only consist [...]