Accurate Modeling for RF Silicon MOSFET up to 15 GHz and the Parameter Extraction Methodology

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The accurate method to extract a small-signal subcircuit model of MOSFET’s based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are shown. The procedure of the parameter extraction for RF MOSFET model is discussed and verified by experiment. The excellent correspondence is achieved between the modeled and measured S-parameters up to 15GHz for 0.18um CMOS process technology.

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Journal: TechConnect Briefs
Volume: 2, Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Published: February 23, 2003
Pages: 380 - 383
Industry sector: Sensors, MEMS, Electronics
Topics: Modeling & Simulation of Microsystems
ISBN: 0-9728422-1-7