Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations
Quantum effects on MOS structures investigation.
Keywords: MOSFET
Inner Sidewall Gate MOSFET with HfO2 gate Dielectric and Pt electrode
Im K., Ahn C-G, Yang J.H., Baek I-B, Choi C-J, Lee S., Hwang H., Cho W-J, Choi C-J, Electronics and Telecommunications Research Institute, KR
UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining [...]
CMOS Compatability of Carbon Nanotubes on SOI Devices
Haque M.S., Oei S.P., Teo K.B.K., Udrea F., Gardner J.W., Milne W.I., Cambridge University Engineering Department, UK
This paper reports for the first time PECVD and CVD growth of MWNTs both aligned and non aligned on high temperature partially depleted CMOS SOI substrates. We also report for the first time the growth [...]
A History of MOS Transistor Compact Modeling
The MOSFET (Metal-Oxide-Silicon Field-Effect- Transistor) or MOS Transistor (MOST) is a three dimensional electronic device. It operates on the conductivity modulation principle in a thin semiconductor layer by a controlling electric field to give amplifying [...]
Noise Modeling with MOS Model 11 for RF-CMOS Applications
Scholten A.J., Tiemeijer L.F., van Langevelde R., Zegers-van Duijnhoven A.T.A., Havens R.J., Zegers-van Duijnhoven A.T.A., Venezia V.C., Klaassen D., Philips Research Laboratories Eindhoven, NE
The RF noise in 0.18um CMOS technology has been measured and modeled. Compared to long-channel theory we find only a moderate enhancement of the drain and current noise for short-channel MOSFETS and, due to the [...]
Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs
Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]
A Compact Physical Model for Critical Quantum Mechanical Effects On MOSFET
As the MOSFET is scaled down to sub-100nm range, two quantum mechanical effects (QME) of the energy quantization and the electron tunneling though the gate oxide become critical. A new compact physical model for QME [...]
SPICE Modeling of Multiple Correlated Electrical Effects of Dopant Fluctuations
Lee Y.M., Watts J., Grundon S., Cook D., Howard J., IBM Semiconductor Research and Developement Center, US
We proposed a new methodology capable of accurately modeling the partial correlations and geometric dependency in the local random fluctuations of various electrical parameters. This method incorporates principal factor analysis (PFA) into the conventional SPICE-based [...]
All-Region MOS Model of Mismatch due to Random Dopant Placement
Electron device matching has been a key factor on the performance of today’s analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. A model for MOS [...]
The Effects of the Gate Tunneling Current on the High Frequency Noise Parameters of MOSFETs
The impact of the gate tunneling current (GTC) on the noise performance of MOSFETs with very thin gate oxides is studied by developing analytical expressions for the four parameters that describe the noise performance of [...]