UTB ISG MOSFET with gate length of 60 nm was fabricated with HfO2 gate dielectric and Pt gate electrode. The proposed device has some advantage over conventional replacement gate process. Besides simpler process, the remaining doped polysilicon can be a role as elevated source drain. And the gate length is easily adjustable by sidewall thickness.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 24 - 27
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices