double gate MOSFET – TechConnect Briefs

Analytical Surface Potential Solution for Low Effective Mass Channel Common Double Gate MOSFET

Chakraborty A.S., Jandhyala S., Mahapatra S., Indian Institute of Science, Bangalore, IN

Obtaining an accurate although computationally efficient analytic solution for surface potential is the key step towards developing compact model for Low Effective Mass channel material Common Double Gate (CDG) MOSFETs [1]. In our previous work [...]

Compact Model HiSIM-DG both for Symmetrical and Asymmetrical DG-MOSFET Structures

Ishimura K., Sadachika N., Kusu S., Miura-Mattausch M., Hiroshima University, JP

In this work, the circuit simulation model for DG-MOSFET named HiSIM-DG, has been developed based on the complete surface-potential-based description. The model solves the Poisson equation to the vertical direction iteratively in quasi-2 dimensions including [...]

Analytical Modelling and Performance Analysis of Double-Gate MOSFET-based Circuit Including Ballistic/quasi-ballistic Effects

Martinie S., CEA/LETI/MINATEC, FR

As the MOSFET continues to shrink rapidly, emerging physical phenomena, such as ballistic transport, have to be considered in the modelling and simulation of ultra-scaled devices. Future Double-Gate MOSFETs, designed with channel lengths in the [...]

Quantum Correction for the Current-Based One-Particle Monte-Carlo Method

Brugger S.C., Wirthmueller A., Schenk A., ETH Zürich, CH

In a previous work we proposed a one-particle Monte-Carlo method based on equations for the currents. Our method has the advantage of being able to take into account arbitrary generation-recombination processes self-consistently. Recently, we extended [...]

Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs

Galup-Montoro C., Schneider M.C., Cunha A.I.A., Universidade Federal da Bahia - UFBA, BR

The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined [...]

A Computationally Efficient Method for Evaluating Distortion in DG MOSFETs

Salazar R., Ortiz-Conde A., García-Sánchez F.J., Solid State Electronics Laboratory, VE

In this paper we have generalized the correlation between Integral Nonlinearity Function (INLF) and Total Harmonic Distortion (THD) of independently driven double -gate (IDDG) MOSFETs.

Analytic Charge Model for Double-Gate and Surrounding-Gate MOSFETs

Yu B., Lu H., Lu W-Y, Lu H., Lu W-Y, Taur Y., UCSD, US

An analytic charge model for both double-gate (DG) and surrounding-gate (SG) MOSFETs is presented. With only the mobile charge term, Poisson’s equation is rigorous solved and the analytic electrostatic potential is derived. The development of [...]

Compact Modeling of Short Channel Double-Gate MOSFETs

Lu H., Liang X., Wang W., Taur Y., Univ. California, San Diego, US

This talk presents analytical modeling of short-channel effect in double-gate MOSFETs. 2-D Poisson’s eq. is solved as a boundary value problem in subthreshold. 2-D potential distribution and subthreshold currents have been calculated and verified by [...]

An Explicit Quasi-Static Charge-Based Compact Model for Symmetric DG MOSFET

Prégaldiny F., Krummenacher F., Sallese J.M., Diagne B., Lallement C., InESS, FR

This paper presents a closed-form compact model for the undoped double-gate (DG) MOSFET under symmetrical operation. This charge-based model aims at giving a comprehensive understanding of the device from the circuit design point of view. [...]

A Framework for Generic Physics Based Double-Gate MOSFET Modeling

Chan M., Taur Y., Lin C.H., He J., Niknejad A., Hu C., Hong Kong University of Science & Technology, HK

This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to [...]