Analytical Modelling and Performance Analysis of Double-Gate MOSFET-based Circuit Including Ballistic/quasi-ballistic Effects


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As the MOSFET continues to shrink rapidly, emerging physical phenomena, such as ballistic transport, have to be considered in the modelling and simulation of ultra-scaled devices. Future Double-Gate MOSFETs, designed with channel lengths in the decananometer scale, are expected to be more ballistic or quasi-ballistic than diffusive. At this level of miniaturisation is essential to directly evaluate the impact of ballistic and quasi-ballistic transport at circuit level through simulation of several circuit demonstrators. In this work we demonstrate the feasibility of a simulation study of ballistic/quasi-ballistic transport at circuit level and we show the impact this advanced transport on the commutation of CMOS inverter and the oscillation frequency of ring oscillator.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 837 - 840
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4200-8505-1