Zhou X. – Page 3 – TechConnect Briefs

Interface Traps in Surface-Potential-Based MOSFET Models

Chen Z., Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Nanyang Technological University, SG

Surface or interface properties along the surface channel region have great influences on the MOSFET characteristics. The interface-trap density increases during the repeated program-erase cycling of non-volatile floating-gate and SONOS memory transistors. Thus, the compact [...]

An Analytic Model of the Silicon-Based Nanowire Schottky Barrier MOSFET

Che Y., Zhang L., Zhou X., He J., Chan M., Peking University, CN

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics [...]

Generic Compact Model Development of Double-Gate MOSFETs with Inclusion of Different Operation Modes and Channels from Heavily Doped to Intrinsic Case

Zhou X., Zhang J., Zhang L., Zhang J., Zhang L., Ma C., He J., Chan M., Peking University, CN

In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model [...]

Improvement of electric energy density in PVDF terpolymer nanocomposites and blends

Chu B., Neese B., Lin M., Zhou X., Chen Q., Zhang Q.M., The Penn State University, US

Large enhancement in the electric energy density and electric displacement level were found in nanocomposites of poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (PVDF-TrFE-CFE) relaxor ferroelectric polymer/ZrO2 nanoparticles. Through the interface effect the presence of the nanoparticles (with only 1.6 [...]

A Technique for Constructing RTS Noise Model Based on Statistical Analysis

Wei C.Q., Xiong Y.Z., Zhou X., Nanyang Technological University, SG

In this paper, a technique for constructing the RTS noise model based on the statistical analysis of the noise data obtained from the Schottky diode under different biases is introduced. The three RTS parameters: pulse [...]

Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Any Body Doping

See G.H., Zhou X., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

Double-gate MOSFET is one of the key potential devices to allow further extension of CMOS technology scaling. The compact modeling community faces great challenges to model the physical effects due to the coupling of the [...]

Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

Zhu G., Zhu Z., See G.H., Zhou X., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

The quasi-2D method has been used to account for short-channel effects in PN-junction MOSFETs. Recently some authors applied the quasi-2D solution to SB MOSFETs to derive potential profiles. In this paper, an improved quasi-2D solution [...]

Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Quantum-Mechanical Effects

See G.H., Zhou X., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Zhang J., Srinivas A., Nanyang Technological University, SG

The quantum mechanical effect (QME) in nanoscale MOSFETs has become more and more important. The quantization of the space charge density in bulk-MOS compact models is usually modeled by the van Dort model with a [...]

New Properties and New Challenges in MOS Compact Modeling

Zhou X., See G.H., Zhu G., Zhu Z., Zhu G., Zhu Z., Lin S., Wei C., Srinivas A., Zhang J., Nanyang Technological University, SG

As bulk-MOS technology is approaching its fundamental limit, non-classical devices such as multiple-gate (MG) and silicon-nanowire (SiNW) transistors emerge as promising candidates for future generation device building blocks. This trend poses new challenges in developing [...]

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models

See G.H., Zhou X., Chandrasekaran K., Chiah S.B., Zhu G.J., Zhu Z.M., Lim G.H., Wei C.Q., Lin S-H, Zhu G.J., Zhu Z.M., Nanyang Technological University, SG

One of the critical problems in Gummel symmetry at higher-order derivatives that still exists in current and next generation MOS compact models has been solved with a simple modification of the mathematical smoothing function. The [...]