New Properties and New Challenges in MOS Compact Modeling

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As bulk-MOS technology is approaching its fundamental limit, non-classical devices such as multiple-gate (MG) and silicon-nanowire (SiNW) transistors emerge as promising candidates for future generation device building blocks. This trend poses new challenges in developing a compact model suitable for these new device structures, and requires a paradigm shift in the core model structure. Conventional bulk-MOS models are based on four-terminal unipolar conduction in a doped channel with ideal symmetrical PN-junction source/drain contacts. In MG/NW MOSFETs, however, the device becomes three-terminal with undoped channel and possible bipolar conduction, and source/drain contacts become an integral part of intrinsic channel. Source/drain asymmetry, either intentional or unintentional, in a theoretically symmetric MOSFET also becomes important to be captured in a compact model, which is nontrivial in a model that depends on terminal source/drain swapping at the circuit level. This paper discusses these new challenges and demonstrates solutions based on the unified regional modeling (URM) approach.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 750 - 755
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 978-1-4200-8505-1