Unified Regional Surface Potential for Modeling Common-Gate Symmetric/Asymmetric Double-Gate MOSFETs with Any Body Doping

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Double-gate MOSFET is one of the key potential devices to allow further extension of CMOS technology scaling. The compact modeling community faces great challenges to model the physical effects due to the coupling of the two gates. The input-voltage equation can be derived from the first integral of the Poisson equation, but it is not sufficient to solve for the two-variable implicit equation. Most assumed that only one-carrier type (i.e., electrons for nMOS) contributes to transport, although its validity has been studied only recently with a rigorous iterative solution of elliptic-integrals that considered both types of carriers (electrons and holes).However, the assumption of ignoring dopant in the Poisson solution is strictly valid only for ideal (pure) semiconductors that do not practically exist. Even for undoped body, unintentional dopant always exist, which would make the second integral of Poisson equation theoretically impossible. BSIM-MG has included the effect of body doping in the surface-potential computation through the perturbation approach. The surface potential behavior follows the physical structures but it involves multiple iterations in different regions, which can be computational expensive for compact modeling. In this work, regional surface potentials are solved explicitly and unified for a single-piece solution.

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Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 770 - 773
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling
ISBN: 978-1-4200-8505-1