The quasi-2D method has been used to account for short-channel effects in PN-junction MOSFETs. Recently some authors applied the quasi-2D solution to SB MOSFETs to derive potential profiles. In this paper, an improved quasi-2D solution is proposed which is valid for arbitrary terminal bias with respective to any reference voltage and applicable to asymmetric SB-DG devices. A terminal-bias dependent characteristic length is physically derived, which has been missed in all previous literature.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 760 - 763
Industry sector: Sensors, MEMS, Electronics
Topics: Compact Modeling