Compact Modeling of Parameter Variations of Nanoscale CMOS due to Random Dopant Fluctuation
Ye Y., Zhu Y., He H., He J., Mei J., Cao Y., He H., He J., PKU-HKUST Shenzhen-Hongkong Institution, CN
In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the [...]