Hiroshima University – Page 2 – TechConnect Briefs

High-Voltage MOSFET Model Valid for Device Optimization

Oritsuki Y., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Kikuchihara U. Feldmann H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Market for power devices are expanding due to the global warming problem. It is expected that the power devices play an important role for stopping the problem. For this purpose accurate compact models are highly [...]

Compact Model HiSIM-DG both for Symmetrical and Asymmetrical DG-MOSFET Structures

Ishimura K., Sadachika N., Kusu S., Miura-Mattausch M., Hiroshima University, JP

In this work, the circuit simulation model for DG-MOSFET named HiSIM-DG, has been developed based on the complete surface-potential-based description. The model solves the Poisson equation to the vertical direction iteratively in quasi-2 dimensions including [...]

HiSIM-SOI: SOI-MOSFET Model for Circuit Simulation Valid also for Device Optimization

Sadachika N., Kusu S., Ishimura K., Murakami T., Kajiwara T., Hayashi T., Nishikawa Y., Yoshida T., Miura-Mattausch M., Hiroshima University, JP

SOI-MOSFETs are considered to be suitable for high performance as well as low power applications and its developments are tend to go toward the thinner SOI films to enhance the device characteristics. Thus compact models [...]

HiSIM-HV: a complete surface-potential-based MOSFET model for High Voltage Applications

Oritsuki Y., Yokomiti M., Sakuda T., Sadachika N., Miyake M., Kajiwara T., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

We present here the high-voltage MOSFET model HiSIM-HV based on the complete surface-potential description. The model is valid both for symmetrical and asymmetrical structures with scaling properties for any structural variations valid for wide range [...]

Modeling of Floating-Body Devices Based on Complete Potential Description

Sadachika N., Murakami T., Ando M., Ishimura K., Ohyama K., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP

Advanced MOSFETs exploit the carrier confinement to suppress the short-channel effect, which is realized by reducing the bulk layer thickness. The ongoing developments of the multi-gate MOSFET as well as the fully-depleted SOI-MOSFET with ultra [...]

Construction of a Compact Modeling Platform and Its Application to the Development of Multi-Gate MOSFET Models for Circuit Simulation

Miura-Mattausch M., Chan M., He J., Koike H., Mattausch H.J., Miura-Mattausch M., Nakagawa T., Park Y.J., Tsutsumi T., Yu Z., Hiroshima University, JP

We are reporting the construction of a common platform for compact model development based on the Verilog-A language and in particular a framework for efficient development of multi-gate MOSFET models for circuit simulation. Phenomena expected [...]

Silylation Hardening for Mesoporous Silica Zeolite Film

Kikkawa T., Hiroshima University, JP

Pure silica zeolite films were prepared for ultra-low-k interlayer dielectrics in ultra-large integrated circuits by both hydrothermal crystallization using tertabuthylammonium hydroxide, tetraethylorthosilicate and ethylalcohol, and vapor phase transport synthesis using ethylene diamine and triethylamine. Self-assembled [...]

The Si-tag for Immobilizing Proteins on a Silicon Device

Kuroda A., Hiroshima University, JP

Targeting functional proteins to specific sites on a silicon device is essential for the development of new biosensors and supramolecular assemblies. Recently, we found ribosomal protein L2 as a silicon-binding protein, which can be used [...]

HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications

Miyake M., Sadachika N., Matsumoto K., Navarro D., Ezaki T., Miura-Mattausch M., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Hiroshima University, JP

For RF-circuit analysis, an accurate compact model for the MOS varactor is urgently desired. We have developed such an accurate MOS varactor model HiSIM-Varactor based on the surface-potential MOSFET model HiSIM. HiSIM-Varactor includes the majority [...]

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond

Miura-Mattausch M., Sadachika N., Miyake M., Navarro D., Ezaki T., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Miyamoto S., Inagaki R., Furui Y., Hiroshima University, JP

HiSIM realizes both accurate and fast circuit simulation. The newly developed HiSIM2.4.0 includes required features in modeling for the 45nm technology node and beyond such as the STI stress effect. A major development is an [...]